PART |
Description |
Maker |
SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET GaAs N-channel Dual-Gate MES FET GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation] SONY [Sony Corporation]
|
SGM2016M/P |
GaAs N-channel Dual-Gate MES FET
|
SONY
|
3SK165A |
GaAs N-channel Dual Gate MES FET From old datasheet system
|
Sony
|
3SK165 3SK165A 3SK165A-0 3SK165A-1 |
GaAs N-channel Dual Gate MES FET GaAs N-channel Dual Gate MES FET
|
Sony Corporation
|
3SK240 |
Field Effect Transistor GaAs N-Channel Dual Gate MES Type TV Tuner, UHF RF Amplifier Applications
|
TOSHIBA
|
3SK320 |
RF Dual Gate FETs N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX)
|
Toshiba Semiconductor
|
3SK274 E001715 |
From old datasheet system N CHANNEL DUAL GATE MES TYPE (TV TUNER, UHF RF AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
NEZ7785-4D NEZ7785-4DD NEZ7785-8D NEZ7785-8DD NEZ4 |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 4W/8W C波段砷化镓场效应管N沟道砷化镓场效应晶体 CAP 15UF 16V 10% TANT SMD-6032-28 TR-7 CAP TANTALUM 1.5UF 35V 10% SMD 20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor VARISTOR, 300VAC; Series:VE; Voltage rating, AC:300V; Suppressor type:Varistors; Voltage rating, DC:385V; Current, Peak Pulse IPP @ 8/20uS:2500A; Voltage, clamping 8/20us max:775V; Energy, transient 10/1000us max:45J; RoHS Compliant: Yes
|
NEC, Corp. NEC Corp. NEC[NEC] http://
|
3SK184 |
GaAs N-Channel MES FET
|
Panasonic
|
NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500 |
2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
NEC Corp. NEC[NEC]
|
NE72218 NE72218-T1 NE72218-T2 |
RES-MF 150 OHM 1/4W 1% C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC]
|
NE76184A-T1A NE76184A-SL NE76184A NE76184A-T1 NE76 |
GENERAL PURPOSE FET N-CHANNEL GaAs MES FET
|
NEC Corp. NEC[NEC] http://
|